Ram Máy Tính MEMRUNNER 16GB DDR4 3200MHz (RN43216G5U1B220B)

 Power Supply: VDD=1.2V (1.14V to 1.26V)

 VDDQ = 1.2V (1.14V to 1.26V)

 VPP – 2.5V (2.375V to 2.75V)

 VDDSPD=2.25V to 3.6V

 Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

 Low-power auto self refresh(LPASR)

 Data bus inversion (DBI) for data bus

 On-die VREFDQ generation and calibration

 On-board I2 serial presence-detect (SPD) EEPROM

 16 internal banks; 4 groups of 4 banks each

 Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)

 Selectable BC4 or BL8 on-the-fly (OTF)

 Databus write cyclic redundancy check (CRC)

 Temperature controlled refresh (TCR)

 Command/Address (CA) parity

 Per DRAM Addressability is supported

 8 bit pre-fetch

 Fly-by topology

 Command/Address latency (CAL)

 Terminated control command and address bus

 PCB: Height 1.23” (31.25mm)

 Gold edge contacts

 RoHS Compliant and Halogen-Free